LEXAR NM790 1TB Internal SSD M.2 PCIe Gen 4×4 NVMe 2280

Experience extreme storage performance with the LEXAR NM790 1TB PCIe Gen 4×4 NVMe SSD in M.2 2280 form factor, engineered for gamers, creatives, and performance‑oriented professionals. Delivering sequential reads up to 7,400 MB/s and writes up to 6,500 MB/s, along with random I/O performance up to 1,000,000 IOPS read and 900,000 IOPS write, this drive balances blazing speed, energy efficiency, and compact design backed by a five‑year limited warranty and endurance rating of 1,000 TBW. Compatible with laptops, desktops, and even PlayStation 5, the NM790 offers cutting‑edge PCIe 4.0 SSD power at accessible pricing.

Product Features

Extreme PCIe Gen 4×4 speed

Drives sequential read speeds up to 7,400 MB/s and sequential writes up to 6,500 MB/s, drastically reducing load times for games and large files. Random read and write IOPS reach up to 1,000,000 and 900,000 respectively for rapid responsiveness.

NVMe 1.4 with HMB 3.0 and Dynamic SLC caching

Supports NVMe 1.4 standard (for 1TB model) with Host Memory Buffer (HMB) 3.0 and dynamic SLC cache, improving performance without onboard DRAM and reducing power use.

Energy‑efficient and thermally optimized

Uses up to 40% less power than traditional DRAM‑cache-enabled PCIe Gen 4 SSDs and includes efficient thermal design to maintain stable speed under heavy load.

Compatible with PlayStation 5 and PC platforms

Qualified for use with PS5 storage expansion as well as laptops and desktops, providing versatility across devices.

Excellent endurance and warranty

Rated for 1,000 TBW, backed by a five‑year limited warranty and a 1,500,000‑hour MTBF rating, offering reliable long-term use.

Compact M.2 2280 single‑sided design

At just 80 × 22 × 2.45 mm and approximately 6 g, this single‑sided SSD fits easily into laptops and compact desktops while maintaining high performance.

Product Specifications

• Capacity: 1 TB
• Form factor: M.2 2280 (single‑sided, ~6 g)
• Interface / protocol: PCIe Gen 4×4, NVMe 1.4
• Sequential read speed: up to 7,400 MB/s
• Sequential write speed: up to 6,500 MB/s
• Random read IOPS: up to 1,000,000
• Random write IOPS: up to 900,000
• Controller: MaxioTech MAP1602 (12 nm process)
• NAND flash: 3D TLC (YMTC 232-layer)
• DRAM cache: none (uses HMB 3.0)
• TBW endurance: 1,000 TBW
• MTBF: 1,500,000 hours
• Operating temperature: 0 °C to 70 °C
• Storage temperature: –40 °C to 85 °C
• Shock resistance: 1,500 G, 0.5 ms, half sine wave
• Vibration resistance: 10‑2,000 Hz, 1.5 mm, 20 G, 30 min/axis (X, Y, Z)
• Warranty: five‑year limited warranty